| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 164 0 |
 SM ISO690:2012SENOKOSOV, Edward, CHUKITA, V., ODIN, Ivan, CHUKICHEV, Mikhail. Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system. In: Inorganic Materials, 2015, vol. 51, nr. 1, pp. 5-10. ISSN 0020-1685. DOI: https://doi.org/10.1134/S0020168515010173 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Inorganic Materials |
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| Volumul 51, Numărul 1 / 2015 / ISSN 0020-1685 /ISSNe 1608-3172 | ||||||
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| DOI:https://doi.org/10.1134/S0020168515010173 | ||||||
| Pag. 5-10 | ||||||
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| Rezumat | ||||||
We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in n-CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by n-CdSe epilayers grown under near-equilibrium high-temperature deposition conditions. |
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| Cuvinte-cheie CdSe, Electron beam excitation, Epilayers grown, Growth process, High-temperature deposition, Quasi-closed systems |
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