Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system

Senokosov Edward; Chukita V.; Odin Ivan; Chukichev Mikhail

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SENOKOSOV, Edward, CHUKITA, V., ODIN, Ivan, CHUKICHEV, Mikhail. Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system. In: Inorganic Materials, 2015, vol. 51, nr. 1, pp. 5-10. ISSN 0020-1685. DOI: https://doi.org/10.1134/S0020168515010173

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Inorganic Materials

Volumul 51, Numărul 1 / 2015 / ISSN 0020-1685 /ISSNe 1608-3172

Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system

DOI:https://doi.org/10.1134/S0020168515010173

Pag. 5-10

Senokosov Edward¹, Chukita V.¹, Odin Ivan², Chukichev Mikhail ²

¹ T.G. Shevchenko State University of Pridnestrovie, Tiraspol,
² Lomonosov Moscow State University

Disponibil în IBN: 5 mai 2023

Rezumat

We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in n-CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by n-CdSe epilayers grown under near-equilibrium high-temperature deposition conditions.

Cuvinte-cheie
CdSe, Electron beam excitation, Epilayers grown, Growth process, High-temperature deposition, Quasi-closed systems

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<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Senokosov, E.A.</dc:creator>
<dc:creator>Chukita, V.I.</dc:creator>
<dc:creator>Odin, I.N.</dc:creator>
<dc:creator>Chukichev, M.</dc:creator>
<dc:date>2015-01-23</dc:date>
<dc:description xml:lang='en'><p>We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in n-CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by n-CdSe epilayers grown under near-equilibrium high-temperature deposition conditions.</p></dc:description>
<dc:identifier>10.1134/S0020168515010173</dc:identifier>
<dc:source>Inorganic Materials  (1) 5-10</dc:source>
<dc:subject>CdSe</dc:subject>
<dc:subject>Electron beam excitation</dc:subject>
<dc:subject>Epilayers grown</dc:subject>
<dc:subject>Growth process</dc:subject>
<dc:subject>High-temperature deposition</dc:subject>
<dc:subject>Quasi-closed systems</dc:subject>
<dc:title>Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>