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 SM ISO690:2012БАХАДИРХАНОВ, М., ИБРАГИМОВ, Ш., КАМОЛОВ, И.. Электрофизические характеристики Au-n-InP и роль переходного слоя. In: Электронная обработка материалов, 2004, nr. 1(40), pp. 82-87. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 1(40) / 2004 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 82-87 | ||||||
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Work is devoted to the detailed analysis of physical properties of metal semiconductor (MS) with barrier Shottki on InP. On its basis a mechanism of current transport in contacts and the influence of concentration of carriers of charge and temperature is established. The substantiation of necessity of application of the model of contacts with a transitive layer for the description of characteristics of MS-structures on InS is given. The new method of manufacturing Au-n-InP Shottki diodes with an intermediate layer can be used for manufacturing (FST) on InP. |
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