MSP 21P Study of AlN layers grown on Si by HVPE method at the stage of nucleation
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RAEVSKY, Simion, KOMPAN, Mihail, ZHILYAEV, Yurii, GORCEAC, Leonid, BOTNARIUC, Vasile. MSP 21P Study of AlN layers grown on Si by HVPE method at the stage of nucleation. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 89.
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Materials Science and Condensed Matter Physics
Editia 5, 2010
Conferința "Materials Science and Condensed Matter Physics"
Chișinău, Moldova, 13-17 septembrie 2010

MSP 21P Study of AlN layers grown on Si by HVPE method at the stage of nucleation


Pag. 89-89

Raevsky Simion1, Kompan Mihail2, Zhilyaev Yurii2, Gorceac Leonid1, Botnariuc Vasile1
 
1 Moldova State University,
2 Ioffe Physical-Technical Institute, RAS
 
 
Disponibil în IBN: 15 aprilie 2021