The work represents a review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemistry. Novel spatial nanoarchitectures based on III-V and II-VI compounds as well as two-dimensional metallosemiconductor structures are demonstrated. A breakthrough in the design and fabrication of ultrathin membranes of non-layered wide-band-gap semiconductor compounds is presented. Over the last years, we elaborated technological approaches for 2D and quasi-3D nanostructuring of III-V and II-VI semiconductor compounds using anodic etching under controlled conditions. The nanostructured matrices served as conductive templates for the growth of arrays of metal nanotubes and nanowires by electroplating. As a result technological routes have been elaborated for the fabrication of two-dimensional metallo-semiconductor quasi-periodic structures for photonic applications. In particular, Platinum-semiconductor 2D quasi-periodic structures have been successfully elaborated on InP, GaP and ZnSe single crystalline substrates [1]. In our attempt to broaden the areas of applications of electrochemistry when combined with preliminary radiation treatment of samples, a few years ago we proposed the approach of surface charge lithography (SCL) as a tool for maskless microstructuring and nanostructuring of GaN epilayers. The approach is based on treatment of the semiconductor compound epilayer by a lowdose low-energy ion beam with subsequent photoelectrochemical (PEC) etching. The ion-beam induced lattice defects trap electrons leading to the appearance of a surplus of negative charge in the near-surface region of the GaN sample. The negative charge protects the ion-beam treated areas against PEC etching. Using the ion-beam-induced negative charge as a shield against PEC etching, we demonstrated unique possibilities for GaN nanostructuring, including fabrication of ultrathin GaN membranes suspended over networks of nanocolumns/nanowhiskers related to threading dislocations. We found that photoelectrochemical etching of GaN combined with preliminary low-dose lowenergy focused-ion-beam treatment of the sample surface provide conditions for both 2D and 3D micro-nanostructuring of this important electronic material. In case of 2D nanostructuring, it is possible to fabricate in a controlled fashion arrays of nanowires and nanowalls for sensor and photonic applications. By controlling the fluence of the ion treatment as a function of x-y coordinates, we reached conditions for the fabrication of both ultrathin membranes and supporting nanocolumns in the same technological route [2]. Note that PEC etching in-depth is possible due to high transparency of the membrane to ultraviolet light. Possible applications of the developed nonlithographic technologies and nanomaterials will be considered. This work was supported by the Academy of Sciences of Moldova under the State Program on nanotechnologies, and by the EC under the Grant no 266515 (FP7 project MOLD-ERA).