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 SM ISO690:2012BODNAR, I., LEVCENKO, Sergiu, ARUSHANOV, Ernest, LEON, Maximo. CPPP 38 P Transmittance spectra of the Cu2ZnGeSe4 thin films. In: Materials Science and Condensed Matter Physics, Ed. 6, 11-14 septembrie 2012, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2012, Editia 6, p. 177. ISBN 978-9975-66-290-1. |
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| Materials Science and Condensed Matter Physics Editia 6, 2012 |
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Conferința "Materials Science and Condensed Matter Physics" 6, Chișinău, Moldova, 11-14 septembrie 2012 | ||||||
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Cu2ZnGeSe4 (CZGSe) is interesting and promising p-type semiconductor materials for optoelectronics applications and solar cells [1]. CZGSe crystallize in stannite type structure, tetragonal lattice, space group I 42m[2]. In this paper, we report the results of studies of the transmittance spectra of the Cu2ZnGeSe4 films in the wavelength range from 500 to 3000 nm. Cu2ZnGeSe4 thin films were obtained by ion beam sputtering at different substrate temperature Ts. We used the focused argon ion beam because sputtering target has small diameter (18 mm). The working pressure was 5·10-4 torr, accelerating anode voltage was 3 kV, target current was 45 mA, target-substrate distance was 80 mm and deposition rate was about 0, 58 nm/s. The composition of the crystal and films was determined by X- ray microprobe spectral analysis. Data are given in Table. It can be seen that the composition of the deposited films is consistent with the content of elements in the crystal grown and no significant composition variations from point to point was observed in both the crystals and films. The structure of the crystals and films were established by the X – ray diffraction (XRD) method. The diffraction patterns were recorded with DRON - 3M automated computer controlled X - ray diffractometer operating with CuKα radiation and a graphite monochromator. The transmittance spectra were recorded with Cary - 500 spectrophotometer at T = 300 K.tabelThe optical absorption coefficient of the films was calculated by the formula that takes into account the multiple internal scattering in a plane-parallel sample. The energies of interband transition Eg were determined by extrapolation of the linear portions of the dependences of (αħω)2 on ħω. It was found that as the substrate temperature is increased, the energies of optical transitions decrease. (see Table). Such a shift of the energies of optical transitions with temperature can be attributed to the increase in the degree of crystallinity of the deposited films. Financial supports from IRSES PVICOKEST – 269167 and from BMBF MDA11\002 projects are acknowledged. [1] O.V. Parasyuk, L. D. Gulay, Y.E. Romanyuk, L.V. Piskach. J. Alloys Compd. 329 (2001) 202. [2] O.V. Parasyuk, L.V. Piskach, Y.E. Romanyuk, I.D. Olekseyuk, V.I. Zaremba, V.I. Pekhnyo. J. Alloys Compd. 397 (2005) 85. |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Bodnar, I.T.</dc:creator> <dc:creator>Levcenco, S.V.</dc:creator> <dc:creator>Aruşanov, E.C.</dc:creator> <dc:creator>Leon, M.</dc:creator> <dc:date>2012</dc:date> <dc:description xml:lang='en'><p>Cu2ZnGeSe4 (CZGSe) is interesting and promising p-type semiconductor materials for optoelectronics applications and solar cells [1]. CZGSe crystallize in stannite type structure, tetragonal lattice, space group I 42m[2]. In this paper, we report the results of studies of the transmittance spectra of the Cu2ZnGeSe4 films in the wavelength range from 500 to 3000 nm. Cu2ZnGeSe4 thin films were obtained by ion beam sputtering at different substrate temperature Ts. We used the focused argon ion beam because sputtering target has small diameter (18 mm). The working pressure was 5·10-4 torr, accelerating anode voltage was 3 kV, target current was 45 mA, target-substrate distance was 80 mm and deposition rate was about 0, 58 nm/s. The composition of the crystal and films was determined by X- ray microprobe spectral analysis. Data are given in Table. It can be seen that the composition of the deposited films is consistent with the content of elements in the crystal grown and no significant composition variations from point to point was observed in both the crystals and films. The structure of the crystals and films were established by the X – ray diffraction (XRD) method. The diffraction patterns were recorded with DRON - 3M automated computer controlled X - ray diffractometer operating with CuKα radiation and a graphite monochromator. The transmittance spectra were recorded with Cary - 500 spectrophotometer at T = 300 K.</p><p>tabel</p><p>The optical absorption coefficient of the films was calculated by the formula that takes into account the multiple internal scattering in a plane-parallel sample. The energies of interband transition Eg were determined by extrapolation of the linear portions of the dependences of (αħω)2 on ħω. It was found that as the substrate temperature is increased, the energies of optical transitions decrease. (see Table). Such a shift of the energies of optical transitions with temperature can be attributed to the increase in the degree of crystallinity of the deposited films. Financial supports from IRSES PVICOKEST – 269167 and from BMBF MDA11\002 projects are acknowledged. [1] O.V. Parasyuk, L. D. Gulay, Y.E. Romanyuk, L.V. Piskach. J. Alloys Compd. 329 (2001) 202. [2] O.V. Parasyuk, L.V. Piskach, Y.E. Romanyuk, I.D. Olekseyuk, V.I. Zaremba, V.I. Pekhnyo. J. Alloys Compd. 397 (2005) 85.</p></dc:description> <dc:source>Materials Science and Condensed Matter Physics (Editia 6) 177-177</dc:source> <dc:title>CPPP 38 P Transmittance spectra of the Cu2ZnGeSe4 thin films</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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