The synthesis and deposition of ZnIn2S4 in the form of thin films and preparation of nano- and microstructures of this material was reported [1]. A simple solution chemistry route was also used to prepare nanotubes, nanoribbons, nanowires, and microspheres of this material. This allows one to prepare materials with new properties in comparison with bulk crystals. It is known that semiconductor compounds in the Zn-In-S system can form various polytype modifications [2]. A simple and cost effective method of preparation of thin films of this material was developed earlier [3]. In this communication we propose another reliable method of preparation of ZnIn2S4 films in a quasi-closed volume, which allows one to obtain thin films of this material with reproducible properties. A small distance between the source and the substrate was chosen. This allowed us to decrease considerably the source temperature. ZnIn2S4 single crystals grown by the method of chemical transport reactions with iodine as a transport agent were used as the source material for deposition of the films. The films were deposited on clean glass substrates or on SnO2 or In2O3 transparent conductive layers prepared earlier. The source temperature (Tsource) was varied in the range of 700-1100 oC, and the substrate temperature (Tsubstr) was changed in the range of 300700 oC. The control of the composition and structure of the films was performed by the X-ray diffraction and electron microscopy methods. The optimal regimes of preparation of the films and their characteristics were determined. The main parameters of the deposition process and of the films are presented in the Table. Regimes of preparation and parameters of ZnIn2S4 (I, III) thin filmstabelThe photoluminescence spectra were measured at room temperature. The radiation spectra exhibited a characteristic wide band with its maximum at 745 nm for the three-packet polytype. The excitation spectra are also close to the Gaussian curve. In the ZnIn2S4(III) spectra a weak peculiarity at 400 nm and an intensive peak at 485 nm were observed. In the case of ZnIn2S4(I), one wide maximum at 400 nm was observed. We can suggest that for the both polytype modifications they are defined by the intrinsic absorption. The maximum at 485 nm is linked with the intraband recombination. These data also agree with the optical absorption spectra. It was shown that the photoluminescence characteristics of the films are similar to those of the single crystals. [1] X. Gou, F. Cheng, Yu. Shi, l. Zhang, Sh. Peng, J. Chen, P. Shen, JACS, v. 128, 2006, pp. 7222-7229. [2] F.G. Donika, V.F. Zhitar, S.I. Radautsan, Semiconductors in the System ZnS-In2S3, Chisinau, Stiinta, 1980. [3] V.F. Zhitar, T.D. Shemyakova, Mold. J. Phys. Sci., v. 10, no. 3-4, 2011, pp. 291-294.