In the present paper, SiO2-P2O5 films doped with CdSe were prepared and investigated for temperature sensors applications. The films were synthesized by sol-gel method, spin coating technique, the deposition being made on glass substrates. The sols were prepared from tetraethoxysilane and phosphoric acid as precursors for SiO2 and P2O5, respectively together with ethanol and water as reaction environment and hydrolysis reagent, respectively [1, 2]. The films were deposited at three rotation rates: 1000 rpm, 2000 rpm and 3000 rpm, starting in the first day after the sol preparation moment and going on, several days, till the gelification take place. We studied the influence of the rotation rate and time elapsed since the sols preparation till the deposition moment on the optical and structural properties of the doped films. The films deposited at each rotation rate were annealed at 100oC, 300oC, 500oC 700oC and 900oC in order to investigate the structural and morphological modifications that occurred within the formation process of silicophosphate network. [1] M. Elisa, B. A. Sava, A. Volceanov, R. C. C. Monteiro, E. Alves, N. Franco, F. A. Costa Oliveira, H. Fernandes, M. C. Ferro, J. Non-Cryst. Solids, 356 (2010), 495-501 [2] I. C. Vasiliu, M. Gartner, M. Anastasescu, L.Todan, L. Predoană, M. Elişa, C. Negrilă, F. Ungureanu, C. Logofătu, A. Moldovan, R. Bîrjega, M. Zaharescu, Thin Solid Films, 515 (16) (2007), 6601-6605