Pinning Structure of Dimensional Phonon Resonance in Quantum Wires

Eshpulatov B.; Arziculov E.

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935

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ESHPULATOV, B., ARZICULOV, E.. Pinning Structure of Dimensional Phonon Resonance in Quantum Wires . In: Surface Engineering and Applied Electrochemistry, 2008, nr. 2(44), pp. 165-168. ISSN 1068-3755.

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Surface Engineering and Applied Electrochemistry

Numărul 2(44) / 2008 / ISSN 1068-3755 /ISSNe 1934-8002

Pinning Structure of Dimensional Phonon Resonance in Quantum Wires

Pag. 165-168

Eshpulatov B., Arziculov E.

Disponibil în IBN: 28 noiembrie 2013

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Rezumat

The dimensional phonon resonances in dimensionally-quantum semiconductor wires are considered. It is supposed that the absorption of light is caused by electron transitions between dimensionally–quantum subbands in potential wells with the participation of long-wavelength phonons. The influence of resonance electron–phonon interaction on a spectrum of one-dimensional electrons in quantum wires is investigated. It is shown that the spectrum contains two branches and also the splitting of the peak of the dimensional phonon resonance into two components; the distance between them is determined by the resonance electron–phonon interaction.

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