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 SM ISO690:2012KHUSYAINOV, D., DEKEYSER, C.. Ultrafast carrier dynamics in LT-GAAS doped by δ-Si. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 283. ISBN 978-9975-9787-1-2. |
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| Materials Science and Condensed Matter Physics Editia 8, 2016 |
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Conferința "International Conference on Materials Science and Condensed Matter Physics" 8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016 | ||||||
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Low temperature grown GaAs (LT-GaAs) became one of the most important materials for ultrafast optical and THz devices. In this paper we study influence of δ-Si doping on carrier dynamics of LT-GaAs. Investigation was carried out by means of optical “pump-probe” spectroscopy. Non-equilibrium carriers were injected by femtosecond pulses generated by a Titane:Sapphire laser at 800 nm, which falls above the band gap of GaAs. Transient reflectivity on the same wavelength was detected. |
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<meta name="citation_title" content="Ultrafast carrier dynamics in LT-GAAS doped by δ-Si"> <meta name="citation_author" content="Khusyainov D."> <meta name="citation_author" content="Dekeyser C."> <meta name="citation_publication_date" content="2016"> <meta name="citation_collection_title" content="Materials Science and Condensed Matter Physics"> <meta name="citation_volume" content="Editia 8"> <meta name="citation_firstpage" content="283"> <meta name="citation_lastpage" content="283"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/283-283_2.pdf">
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