Arsenic selenide glasses are well known as high photosensitive materials with a wide range of application in optoelectronics and information storage systems. Besides, it was found that the impurities influence the electrical and photoelectrical characteristics of the amorphous material, due to the changes in the density of localized states. Introduction of the elements of IV group of periodic table in selenide and sulphide glasses, such as Sn and Ge, conduct to the appearance of tetrahedral structural units in the base glass, which change the coordination number. These particularities lead on non-monotonous dependence of physical properties on the glass composition.     In the present paper is shown, that the spectral distribution of the stationary photoconductivity for both glass systems GexAsxSe1-2x and (As4S3Se3)1-xSnx depends on the composition and polarity on the illuminated electrode (Fig.1). The experimental results are discussed in terms of multiple trapping models for amorphous materials, with exponential distribution of localized states in the band gap. Fig.2 represents the results of deconvoluted photocurrent spectrum using Gaussian function for Al-(As4S3Se3)0.90Sn0.10-Al thin films structure. The peak centered at h  =2.27 eV correspond to band-to-band photoexcitation of non-equilibrium carriers. The peaks situated around h  =2.07 eV and 1.85 eV can be attributed to some groups of localized levels induced by Sn impurities in the host chalcogenide glass. In Fig. 3 the peak centered at h  =2.25 eV corresponds to bandto-band photo-excitation of non-equilibrium carriers. The peaks situated around h  =1.5 eV for this composition, can be attributed to some groups of localized levels generated by tetrahedral Ge-based structural units in the host selenide glass. The observed peaks situated in the valence band around h=2.83 eV for amorphous (As4S3Se3)0.90Sn0.10 thin films and around h  =2.92 eV for Ge0.07As0.07Se0.86 can be attributed to the electron states, which results predominantly from the p-orbital electron lone-pair of the chalcogen atoms and p- and  -orbital states of chalcogen. In this approximation the shape of the spectra in this region is governed by the shortrange-order (SRO).