Peculiarity of high-field galvanomagnetic effects in bicrystals of Bi and its alloys with Sb

Muntyanu Fiodor M.; Gilewski Andrzej; Chistol Vitalie; Rogacki Krzysztof

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SM ISO690:2012

MUNTYANU, Fiodor M., GILEWSKI, Andrzej, CHISTOL, Vitalie, ROGACKI, Krzysztof. Peculiarity of high-field galvanomagnetic effects in bicrystals of Bi and its alloys with Sb. In: Nanotechnologies and Biomedical Engineering, Ed. 3, 23-26 septembrie 2015, Chișinău. Springer, 2015, Editia 3, p. 68.

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Nanotechnologies and Biomedical Engineering
Editia 3, 2015

Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
3, Chișinău, Moldova, 23-26 septembrie 2015

Peculiarity of high-field galvanomagnetic effects in bicrystals of Bi and its alloys with Sb

Pag. 68-68

Muntyanu Fiodor M.¹², Gilewski Andrzej², Chistol Vitalie³, Rogacki Krzysztof²⁴⁵

¹ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
² International Laboratory of High Magnetic Fields and Low Temperatures,
³ Technical University of Moldova,
⁴ Institute of Low Temperatures and Structural Research, PAS,
⁵ Polish Academy of Sciences

Disponibil în IBN: 9 aprilie 2019

Rezumat

We present the results of investigation of high-field (up to 40 T) galvanomagnetic effects in bicrystals of semimetalic Bi and 3D topological insulator Bi1−x Sbx (0.07 < x <0.22) with nano-width crystallite interfaces (~100 nm). At B>2T directed along the interface plane in the quantum oscillations spectrum of Bi and Bi-Sb bicrystals, two new harmonics have been detected. Their periods of oscillation characterize the much larger cross-sectional areas of Fermi surface of charge carriers than it is in single crystalline specimens. In small disorientation angle Bi bicrystals of an inclination type, a number of Hall quasi-plateaus were observed, which vanish by reversing the magnetic field. It has been also found that in bicrystals of Bi-Sb with small crystallite disorientation angle, the semiconductor-semimetal transition is induced in crystallites and interface layers at different values of magnetic field.

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