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<creators>
<creator>
<creatorName>Jafarova, E.A.</creatorName>
<affiliation>Institute of Physics, Azerbaijan National Academy of Sciences, Azerbaijan</affiliation>
</creator>
<creator>
<creatorName>Sadygov, Z.Y.</creatorName>
<affiliation>Institute of Physics, Azerbaijan National Academy of Sciences, Azerbaijan</affiliation>
</creator>
<creator>
<creatorName>Ahmadov, F.I.</creatorName>
<affiliation>Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, Azerbaijan</affiliation>
</creator>
<creator>
<creatorName>Sadygov, A.Z.</creatorName>
<affiliation>Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, Azerbaijan</affiliation>
</creator>
<creator>
<creatorName>Dovlatov, A.A.</creatorName>
<affiliation>Institute of Physics, Azerbaijan National Academy of Sciences, Azerbaijan</affiliation>
</creator>
<creator>
<creatorName>Alieva, L.A.</creatorName>
<affiliation>Institute of Physics, Azerbaijan National Academy of Sciences, Azerbaijan</affiliation>
</creator>
<creator>
<creatorName>Tapdygov, E.S.</creatorName>
<affiliation>Institute of Physics, Azerbaijan National Academy of Sciences, Azerbaijan</affiliation>
</creator>
<creator>
<creatorName>Safarov, N.A.</creatorName>
<affiliation>Institute of Physics, Azerbaijan National Academy of Sciences, Azerbaijan</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>On features of barrier capacitance of micropixel avalanche photodiodes on different frequencies</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2014</publicationYear>
<relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'></relatedIdentifier>
<dates>
<date dateType='Issued'>2014</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>Developed in recent years, together with the firm Zecotek Imaging Singapore micropixel silicon avalanche photodiodes ( MAPD ) have high gain of signal (~ 10<sup>5</sup> ) capable of detecting single photons of light with high efficiency ( ~ 40%) , are widely used in the medical and nuclear physical apparatus and for radiation monitoring . MAPD design consists of n-Si, in which two grown epitaxial layer of p-type, between which is a matrix of individual junctions (n <sup>+</sup> - pixels) with a size of 2-5 microns (deeply buried pixels). Principle of operation and fabrication of samples is described in detail in [1,2] .&nbsp; This report presents the results of investigation of the barrier capacitance MAPD in the wide range of frequencies of the AC signal (10kHz - 1MHz). It is shown that for small values ​​of the reverse bias applied to the structure (U<sub>rev</sub> = 0-3 V), measured capacitance value depends strongly on the frequency of the AC signal with increasing U<sub>rev ,</sub>this dependence is markedly decreases and above U<sub>rev </sub>= 5 V is almost absent .&nbsp; The instrument is designed such that in the region of the n <sup>+</sup>- matrix the upper and lower epitaxial layers have no an ohmic connection between them. This communication is performed only on the lateral areas of the device (outside location n <sup>+</sup>- matrix). This results in a large surface resistance of lower epitaxial layer. Since the depletion layer begins at the boundary n-Si with lower epitaxial layer, it behaves as a resistance connected in series with the measured capacitance. Therefore, if higher the frequency of the AC signal, then the stronger the influence of the resistance value of the measured capacitance, which is confirmed by experimental results. &nbsp;&nbsp;&nbsp;&nbsp;There was established that for the correct measurement of the capacity MAPD it is necessary to carry out measurements MAPD on the small AC signal with a frequency of less than 100 kHz. &nbsp;</p></description>
</descriptions>
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