In the last decade the interest towards zinc oxide (ZnO) has increased due to potential photonic and optoelectronic applications [1 – 8] owing to its excellent semiconducting properties such as high electronic mobility and thermal conductivity, good optical transparency, wide band gap (3,36 eV at room temperature), large exciton binding energy (60 meV), significant optical gain (320 cm-1 at room temperature), high destruction threshold under intense excitation, increased resistance to radiation. These applications include photovoltaic cells, light emitting diodes, lasers and detectors.  In this work ZnO layers were produced on glass substrates in a technological process involving magnetron sputtering deposition from a Zn target with subsequent thermal treatment at 480 °C in air for 40 min to oxidize the around 150 nm thick metallic Zn deposit to ZnO. The depositions were carried out for different values of the magnetron power, pressure and substrate temperature. The values of the technological parameters used during deposition and subsequent thermal treatment are summarized in Table 1. Raman spectra showed that ZnO layers were produced and that the layers had good crystalline quality. So, all technological regimes used in this study offer satisfying results from the point of view of crystalline quality of the ZnO layers produced.  The exact regimes that could be used for different kinds of devices will be chosen by taking into consideration electric properties and morphology to produce the necessary functionality.