Application of SEM-FIB and TEM/STEM techniqes for characterization of materials
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DONTEN-BURY, Maria. Application of SEM-FIB and TEM/STEM techniqes for characterization of materials. In: Materials Science and Condensed Matter Physics, Ed. 9, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, Ediția 9, p. 49.
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Materials Science and Condensed Matter Physics
Ediția 9, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics"
9, Chișinău, Moldova, 25-28 septembrie 2018

Application of SEM-FIB and TEM/STEM techniqes for characterization of materials

CZU: 537.533.35+538.9

Pag. 49-49

Donten-Bury Maria
 
Warsaw University
 
 
Disponibil în IBN: 15 ianuarie 2019


Rezumat

Improving of designing electroplated materials and systems constructed for energy storage requires advanced methods of examining their structure and composition on nano- and atomic scale The knowledge of the microstructure and chemistry of materials underpins our understanding of their behavior and provides a pathway to innovation that drives forward technological advance. The extensive development done on electron microscopy and related techniques creates new possibilities in this scientific field.  Advanced Scanning Electron Microscopy (SEM) gives an opportunity of imaging of surface with resolution even below 1 nm. The analyzers combined with SEM e.g. Energy and Wave Dispersive Spectroscopy (EDS/WDS) provide compositional information with resolution down to ca. 50 nm. However, SEM-EDS measurements give only information that is linked to thin surface layer of the examined sample. Combining the SEM technique with the Focused Ion Beam (FIB) tool increase capacity enabling entering dipper parts of materials. A FIB instrument is almost identical to a SEM, but uses a beam of ions rather than electrons. The focused ion beam can directly modify or "mill" the specimen surface via the sputtering process, and this milling can be controlled with nanometer precision. By carefully controlling the energy and intensity of the ion beam, it is possible to perform very precise nanolithography and to produce nano- and microstructures on the surface or to remove the unwanted material. In addition, ion beam assisted chemical vapor deposition can be used to deposit various materials with a level of precision similar to the FIB milling. For this reasons, FIB becomes very powerful in the structural investigations, especially when it is combined with the SEM-EDS system. The integrated SEM-FIB tool can be used in many areas and enables the measurement of many properties and the characterization microstructural aspects of materials. It enables the examination of cross-sections and 3D structural reconstruction of the materials It is especially useful in electroplated materials and is needful for preparation samples (lamellas) for TEM examinations.  The Transmission Electron Microscope (TEM) is a very powerful tool for material science. A high energy beam of electrons is shone through a very thin sample, and the interactions between the electrons and the atoms can be used to observe features such as the crystal structure and features in the structure like dislocations and grain boundaries. Chemical analysis can also be performed. TEM can be used to study the growth of layers, their composition and defects in their structure. High resolution (HRTEM) is the TEM technique supported by the analyses of electrons diffraction effects and can be used for imaging practically any sample on the atomic level.  For researchers in metallurgy, energy storage and conversion, also functional nanomaterials, where elemental distribution is crucial to performance, full characterization is more difficult due to decrease in feature sizes and increasingly complex architectures. In this case two-dimensional imaging and analytical techniques often cannot characterize nanostructures completely. A three-dimensional (3D) imaging based on simple or two axis TEM tomography and STEM-EDS are required.  Principles and particular applications of the mentioned above electron and ion microscopic methods will be given in the lecture.