Ellipsometric investigations of a-As2S3 thin films obtained by RF magnetron sputtering

Başchir Laurenţiu V.; Opran Constantin; Savastru Dan; Miclos Sorin I.; Yovu M.; Popescu Aurelian

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Articolul urmator

963

SM ISO690:2012

BAŞCHIR, Laurenţiu V., OPRAN, Constantin, SAVASTRU, Dan, MICLOS, Sorin I., YOVU, M., POPESCU, Aurelian. Ellipsometric investigations of a-As2S3 thin films obtained by RF magnetron sputtering. In: Chalcogenide Letters, 2018, nr. 4(15), pp. 199-205. ISSN 1584-8663.

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Chalcogenide Letters

Numărul 4(15) / 2018 / ISSN 1584-8663

Ellipsometric investigations of a-As₂S₃ thin films obtained by RF magnetron sputtering

Pag. 199-205

Başchir Laurenţiu V.¹, Opran Constantin², Savastru Dan¹, Miclos Sorin I.¹, Yovu M.³, Popescu Aurelian¹

¹ National Institute for Optoelectronics INOE2000, Magurele,
² University Politehnica of Bucharest,
³ Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 10 august 2018

Rezumat

In this paper we report the investigation of optical properties of As₂S₃ amorphous chalcogenide thin films. Arsenic trisulfide is well known amorphous material. As₂S₃ thin films have important applications in optoelectronics. The most usual method of fabrication is thermal evaporation in vacuum which is known for deposition ofa-As₂S₃ films with high probability of oxidation in contact with ambient environment. In this paperwe studied the optical properties of As₂S₃ thin films obtained by a different method as RF magnetron sputtering. Ellipsometric measurements permit the studies of the film optical constants in high absorption spectral domain which give the possibility to determine the own oscillator frequencies. Fitting model based on the well-established exponential absorption inside the band gap tail and Tauc fundamental absorption was used. Thin films of a-As₂S₃ comparison were made on Si and glass substrates.

Cuvinte-cheie
Chalcogenide amorphous materials, Ellipsometry, Photonics, Plasmonics

DataCite XML Export

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Başchir, L.</creatorName>
<affiliation>Institutul National de Cercetare Dezvoltare in Optoelectronica - INOE 2000, Cluj, România</affiliation>
</creator>
<creator>
<creatorName>Opran, C.</creatorName>
<affiliation>Universitatea Politehnică din Bucureşti, România</affiliation>
</creator>
<creator>
<creatorName>Savastru, D.</creatorName>
<affiliation>Institutul National de Cercetare Dezvoltare in Optoelectronica - INOE 2000, Cluj, România</affiliation>
</creator>
<creator>
<creatorName>Miclos, S.</creatorName>
<affiliation>Institutul National de Cercetare Dezvoltare in Optoelectronica - INOE 2000, Cluj, România</affiliation>
</creator>
<creator>
<creatorName>Iovu, M.S.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Popescu, A.A.</creatorName>
<affiliation>Institutul National de Cercetare Dezvoltare in Optoelectronica - INOE 2000, Cluj, România</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Ellipsometric investigations of a-As2S3 thin films obtained by RF magnetron sputtering</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2018</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1584-8663</relatedIdentifier>
<subjects>
<subject>Chalcogenide amorphous materials</subject>
<subject>Ellipsometry</subject>
<subject>Photonics</subject>
<subject>Plasmonics</subject>
</subjects>
<dates>
<date dateType='Issued'>2018-04-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>In this paper we report the investigation of optical properties of As<sub>2</sub>S<sub>3</sub> amorphous chalcogenide thin films. Arsenic trisulfide is well known amorphous material. As<sub>2</sub>S<sub>3</sub> thin films have important applications in optoelectronics. The most usual method of fabrication is thermal evaporation in vacuum which is known for deposition ofa-As<sub>2</sub>S<sub>3</sub> films with high probability of oxidation in contact with ambient environment. In this paperwe studied the optical properties of As<sub>2</sub>S<sub>3</sub> thin films obtained by a different method as RF magnetron sputtering. Ellipsometric measurements permit the studies of the film optical constants in high absorption spectral domain which give the possibility to determine the own oscillator frequencies. Fitting model based on the well-established exponential absorption inside the band gap tail and Tauc fundamental absorption was used. Thin films of a-As<sub>2</sub>S<sub>3</sub> comparison were made on Si and glass substrates.</p></description>
</descriptions>
</resource>