The Exciton&ndash;Polariton Dispersion Law under the Action of Strong Pumping in the Region of the M-Band of Luminescence

Khadzhi Peter; Nadkin L.; Markov D.

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KHADZHI, Peter, NADKIN, L., MARKOV, D.. The Exciton–Polariton Dispersion Law under the Action of Strong Pumping in the Region of the M-Band of Luminescence. In: Physics of the Solid State, 2018, nr. 4(60), pp. 663-668. ISSN 1063-7834. DOI: https://doi.org/10.1134/S1063783418040145

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Physics of the Solid State

Numărul 4(60) / 2018 / ISSN 1063-7834

The Exciton–Polariton Dispersion Law under the Action of Strong Pumping in the Region of the M-Band of Luminescence

DOI:https://doi.org/10.1134/S1063783418040145

Pag. 663-668

Khadzhi Peter¹², Nadkin L.², Markov D.²

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² T.G. Shevchenko State University of Pridnestrovie, Tiraspol

Disponibil în IBN: 7 mai 2018

Rezumat

The double-pulse interaction with excitons and biexcitons in semiconductors is studied theoretically. It is shown that the dispersion law of carrier wave has three branches under the action of a powerful pumping in the region of the M-band of luminescence. Values of parameters at which the dispersion law branches can intersect due to the degeneration of the exciton level energy have been found. The effect of a significant change in the force of coupling between the exciton and photon of a weak pulse with a change in the pumping intensity is predicted.

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