| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 730 0 |
 SM ISO690:2012YILMAZOGLU, Oktay, PAVLIDIS, Dimitris, LITVIN, Yu., HUBBARD, Seth M., TIGINYANU, Ion, MUTAMBA, Kabula, HARTNAGEL, Hans Ludwig, LYTOVCHENKO, V., EVTUKH, A. A.. Field emission from quantum size GaN structures. In: Applied Surface Science, 2003, vol. 220, pp. 46-50. ISSN 0169-4332. DOI: https://doi.org/10.1016/S0169-4332(03)00750-5 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Applied Surface Science |
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| Volumul 220 / 2003 / ISSN 0169-4332 | ||||||
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| DOI:https://doi.org/10.1016/S0169-4332(03)00750-5 | ||||||
| Pag. 46-50 | ||||||
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| Rezumat | ||||||
A method of using GaN as low electron affinity material modified by photoelectrochemical (PEC) or anodic etching to achieve field enhancement structures and quantum size tips was presented. The latter caused the splitting of electron energy-levels. It was suggested that the decreased effective work function and hence the turn-on voltage is the result of these two factors. |
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| Cuvinte-cheie etching, Metallorganic chemical vapor deposition, Semiconductor doping, Semiconductor quantum dots |
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