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 SM ISO690:2012FANG, Cheng, FOCA, Eugen, SIRBU, Lilian, CARSTENSEN, Juergen, FOLL, Helmut, TIGINYANU, Ion. Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III-V semiconductors. In: Physica Status Solidi (A) Applications and Materials Science, 2007, vol. 204, pp. 1388-1393. ISSN 1862-6300. DOI: https://doi.org/10.1002/pssa.200674352 |
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  Physica Status Solidi (A) Applications and Materials Science |
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| Volumul 204 / 2007 / ISSN 1862-6300 | ||||||
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| DOI:https://doi.org/10.1002/pssa.200674352 | ||||||
| Pag. 1388-1393 | ||||||
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Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO 4 mixed with H 2SO 4 and an optimized process that begins at the bottom of the pores. Pores as deep as 150 iμm could be filled without encountering the so-called "bottleneck" effect. Straight macropores with diameters below 100 nm and extreme aspect ratios in InP could be filled with Cu using a pulsed process. Interconnected pores extending in the available set of (111) directions in {100} GaAs and forming domains could not be filled with Cu; instead the volume occupied by the pore domain was completely filled with Cu; i.e. the porous structure was destroyed. A possible reason for this new effect will be given. |
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| Cuvinte-cheie Metal deposition, Pore domain, Pulsed process, Straight macropores |
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<creatorName>Fang, C.</creatorName>
<affiliation>Universitatea Christian- Albrechts din Kiel, Germania</affiliation>
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<creator>
<creatorName>Foca, E.V.</creatorName>
<affiliation>Universitatea Christian- Albrechts din Kiel, Germania</affiliation>
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<creator>
<creatorName>Sîrbu, L.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
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<creatorName>Carstensen, J.</creatorName>
<affiliation>Universitatea Christian- Albrechts din Kiel, Germania</affiliation>
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<creatorName>Foll, H.</creatorName>
<affiliation>Universitatea Christian- Albrechts din Kiel, Germania</affiliation>
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<creator>
<creatorName>Tighineanu, I.M.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
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<titles>
<title xml:lang='en'>Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III-V semiconductors</title>
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<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2007</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1862-6300</relatedIdentifier>
<subjects>
<subject>Metal deposition</subject>
<subject>Pore domain</subject>
<subject>Pulsed process</subject>
<subject>Straight macropores</subject>
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<date dateType='Issued'>2007-05-01</date>
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<description xml:lang='en' descriptionType='Abstract'><p>Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO <sub>4</sub> mixed with H <sub>2</sub>SO <sub>4</sub> and an optimized process that begins at the bottom of the pores. Pores as deep as 150 iμm could be filled without encountering the so-called "bottleneck" effect. Straight macropores with diameters below 100 nm and extreme aspect ratios in InP could be filled with Cu using a pulsed process. Interconnected pores extending in the available set of (111) directions in {100} GaAs and forming domains could not be filled with Cu; instead the volume occupied by the pore domain was completely filled with Cu; i.e. the porous structure was destroyed. A possible reason for this new effect will be given.</p></description>
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