Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks

Tiginyanu Ion; Popa Veaceslav; Stevens-Kalceff Marion A.

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670

SM ISO690:2012

TIGINYANU, Ion, POPA, Veaceslav, STEVENS-KALCEFF, Marion A.. Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks. In: Materials Letters, 2011, vol. 65, pp. 360-362. ISSN 0167-577X. DOI: https://doi.org/10.1016/j.matlet.2010.10.033

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Materials Letters

Volumul 65 / 2011 / ISSN 0167-577X

Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks

DOI:https://doi.org/10.1016/j.matlet.2010.10.033

Pag. 360-362

Tiginyanu Ion¹², Popa Veaceslav², Stevens-Kalceff Marion A.³

¹ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
² Technical University of Moldova,
³ University of New South Wales

Disponibil în IBN: 29 martie 2018

Rezumat

We propose a method of direct visualization of the spatial nanoarchitecture of dislocation networks which is based on etching away the regions with low density of structural defects from the bulk of GaN epilayers, keeping intact only the threading dislocations and a thin surface filmpre-treated with low-energy Ar⁺ions. The formation of nanometer-thick suspended membranetowhich the dislocations are genetically attached provides conditions for the revelation of the spatial nanoarchitecture of dislocation networks using conventional scanning electron microscopy. Complementary monochromatic and panchromatic micro-cathodoluminescence images are presented.

Cuvinte-cheie
Dislocation network, Suspended membrane, Electron microscopy, Luminescence, Semiconductors

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