Peculiarity of the Low Temperature Thermal Conductivity of Semimetal and Semiconductor Bi1-xSbx Foils
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2022-12-29 17:28
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NIKOLAEVA, Albina, KONOPKO, Leonid, POPOV, Ivan, ROGACKI, Krzysztof, STACHOWIAK, Piotr, JEZOWSKI, Andrzej, SZEWCZYK, Daria, SHEPELEVICH, Vasily, PROKOSHIN, Valerii, GUSAKOVA, Sofia. Peculiarity of the Low Temperature Thermal Conductivity of Semimetal and Semiconductor Bi1-xSbx Foils. In: Multidisciplinarity in Modern Science for the Benefit of Society, 21-22 septembrie 2017, Chișinău. Chișinău, Republica Moldova: Inst. de Fizică Aplicată, 2017, p. 67. ISBN 978-9975-9787-1-2.
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Multidisciplinarity in Modern Science for the Benefit of Society 2017
Masa rotundă "Multidisciplinarity in Modern Science for the Benefit of Society"
Chișinău, Moldova, 21-22 septembrie 2017

Peculiarity of the Low Temperature Thermal Conductivity of Semimetal and Semiconductor Bi1-xSbx Foils


Pag. 67-67

Nikolaeva Albina12, Konopko Leonid12, Popov Ivan1, Rogacki Krzysztof2, Stachowiak Piotr2, Jezowski Andrzej2, Szewczyk Daria2, Shepelevich Vasily3, Prokoshin Valerii3, Gusakova Sofia3
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 Institute of Low Temperatures and Structural Research, PAS,
3 Belarusian State University
 
Disponibil în IBN: 18 martie 2018



Teza

For the first time the temperature dependences of the thermal conductivity χ(Τ) the Bi1-xSbx foils in the semimetal (Bi-3at%Sb) and semiconductor (Bi-16at%Sb) state are investigated in temperature range 4.2 - 300K. The foils of Bi1-xSbx alloys were prepared by the method of highspeed crystallization (v = 5*105 m/s) the melted drop injected into the inner polished surface of a rotating copper cylinder [1]. The thickness of the foils was 10-30 Μm with the texture 1012 parallel to the plane of the foil and the C3 axis coinciding with the normal line to foil surface. It is shown that the thermal conductivity of semimetal (Bi-3%Sb) in the low-temperature range is two orders of magnitude smaller, and in semiconductor (Bi-16%Sb) foils it is an order of magnitude smaller than in bulk samples of the corresponding composition. The effect is interpreted from the viewpoint of decreasing the phonon drag effect [2, 3] in the low-temperature region due to both surface scattering and scattering at grain boundaries of the foil texture. Integrated experimental study the temperature dependences of resistivity ρ(Τ), thermo power α(Τ), thermal conductivity χ(T) has allowed to calculate the thermoelectric efficiency ZT(T) of foils in the temperature range 4.2-300 K. It is established that at 100 K the thermoelectric efficiency Z=α2σ/χ in semiconductor Bi1-xSbx alloys is two times higher than for bulk samples similar composition, which can be used in low-temperature thermoelectric energy converters.