| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 738 0 |
 SM ISO690:2012RADHANPURA, Kruna, ROGER LEWIS, Roger, SIRBU, Lilian, ENACHI, Mihail, TIGINYANU, Ion, SKURATOV, Vladimir. Effect of heavy noble gas ion irradiation on terahertz emission efficiency of InP (100) and (111) crystal planes. In: Semiconductor Science and Technology, 2014, vol. 29, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/29/9/095015 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Semiconductor Science and Technology |
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| Volumul 29 / 2014 / ISSN 0268-1242 | |
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| DOI:https://doi.org/10.1088/0268-1242/29/9/095015 | |
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Emission of terahertz (THz) electromagnetic radiation from heavily-doped (5 × 1018 cm-3) (100) and (111) InP bulk materials and nanoporous honeycomb membranes, irradiated with heavy noble gas (Kr and Xe) ions, is presented. Irradiating samples with Kr or Xe improves THz emission efficiency. For (111) samples, as for unirradiated samples, the irradiated porous structures generate more THz radiation than their bulk counterparts. On the other hand, in contrast to unirradiated (100) samples, the irradiated (100) samples show a decrease in THz emission with porosity. We attribute this behaviour to changes in the local electric field due to the combined effect of the irradiation and nanoporosity. |
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| Cuvinte-cheie compact model, HEMT, high frequency noise, InAlN/GaN, minimum noise figure |
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