Memristive GaN ultrathin suspended membrane array

Dragoman Mircea L.; Tiginyanu Ion; Dragoman Daniela; Braniste Tudor; Ciobanu Vladimir

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DRAGOMAN, Mircea L., TIGINYANU, Ion, DRAGOMAN, Daniela, BRANISTE, Tudor, CIOBANU, Vladimir. Memristive GaN ultrathin suspended membrane array. In: Nanotechnology, 2016, vol. 27, p. 1204. ISSN 0957-4484. DOI: https://doi.org/10.1088/0957-4484/27/29/295204

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Nanotechnology

Volumul 27 / 2016 / ISSN 0957-4484

Memristive GaN ultrathin suspended membrane array

DOI:https://doi.org/10.1088/0957-4484/27/29/295204

Pag. 1204-1204

Dragoman Mircea L.¹, Tiginyanu Ion²³, Dragoman Daniela⁴⁵, Braniste Tudor³, Ciobanu Vladimir³

¹ National Institute for Research and Development in Microtechnology, IMT-Bucharest,
² Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
³ Technical University of Moldova,
⁴ University of Bucharest,
⁵ Romanian Academy of Science

Disponibil în IBN: 18 decembrie 2017

Rezumat

We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 184 μm², act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep.

Cuvinte-cheie
semiconductor membranes, GaN, memristor

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