Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics

Morari Roman; Lenk D.; Zdravkov Vladimir; Prepelitsa Andrei; Antropov Evgheni; Socrovişciuc Alexei; Donu Sofia; Kondrya Elena; Hörn Siegfried; Tidecks Reinhard; Tagirov Lenar; Sidorenko Anatolie

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2024-01-20 17:09

SM ISO690:2012

MORARI, Roman, LENK, D., ZDRAVKOV, Vladimir, PREPELITSA, Andrei, ANTROPOV, Evgheni, SOCROVIŞCIUC, Alexei, DONU, Sofia, KONDRYA, Elena, HÖRN, Siegfried, TIDECKS, Reinhard, TAGIROV, Lenar, SIDORENKO, Anatolie. Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics. In: Microelectronics and Computer Science, Ed. 9, 19-21 octombrie 2017, Chisinau. Chișinău, Republica Moldova: Universitatea Tehnică a Moldovei, 2017, Ediția 9, p. 430. ISBN 978-9975-4264-8-0.

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Microelectronics and Computer Science
Ediția 9, 2017

Conferința "Microelectronics and Computer Science"
9, Chisinau, Moldova, 19-21 octombrie 2017

Magnetic random access memory (MRAM) element based on the triplet spin-valve effect for superconducting spintronics

Pag. 430-430

Morari Roman¹², Lenk D.¹, Zdravkov Vladimir¹², Prepelitsa Andrei², Antropov Evgheni², Socrovişciuc Alexei²¹, Donu Sofia², Kondrya Elena², Hörn Siegfried¹, Tidecks Reinhard¹, Tagirov Lenar¹³, Sidorenko Anatolie¹²

¹ University of Augsburg,
² Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
³ Zavoisky Physical Technical Institute of the Russian Academy of Sciences

Disponibil în IBN: 31 octombrie 2017

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