Структура и важнейшие электрофизические свойства тонких пленок Ge1-Х - SiХ

Abbasov Sh.; Agaverdiieva G.; Baitsar A.; Faradzhova U.; Mekhdevia G.

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ABBASOV, Sh., AGAVERDIIEVA, G., BAITSAR, A., FARADZHOVA, U., MEKHDEVIA, G.. Структура и важнейшие электрофизические свойства тонких пленок Ge1-Х - SiХ. In: Электронная обработка материалов, 2009, nr. 2(45), pp. 98-104. ISSN 0013-5739.

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Электронная обработка материалов

Numărul 2(45) / 2009 / ISSN 0013-5739 /ISSNe 2345-1718

Структура и важнейшие электрофизические свойства тонких пленок Ge1-Х - SiХ

Pag. 98-104

Abbasov Sh.¹, Agaverdiieva G.¹, Baitsar A.², Faradzhova U.³, Mekhdevia G.¹

¹ Институт радиационных проблем НАН Азербайджана,
² Львовский национальный университет имени Ивана Франко,
³ Национальная Академия авиации Азербайджана

Disponibil în IBN: 7 aprilie 2017

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In this work the methodology of getting thin layers on the basis of Ge1-xSix was used. The thin layers formation speed is in 1 Å/c 1000 Å/c. The ability of the quasi – amorphous condition of thin layers on the basis of Ge0,85Si0,15 (h∼100nm) to stay up to 565 K temperature was determined. It has been experimentally established that electron irradiation with stress leads to accelerated crystallization in the film and decrease of electro conductivity.

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