Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
644 1 |
Ultima descărcare din IBN: 2017-08-25 15:58 |
Căutarea după subiecte similare conform CZU |
621.311 (218) |
Electrotehnică (1154) |
SM ISO690:2012 CHEN, Da, HUANG, Shi-Hua. Nitrogen Concentration and Temperature Dependence of Ag/SiN/p+-Si Resistive Switching Structure . In: Электронная обработка материалов, 2016, nr. 4(52), pp. 90-95. ISSN 0013-5739. |
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Электронная обработка материалов | |||||||
Numărul 4(52) / 2016 / ISSN 0013-5739 /ISSNe 2345-1718 | |||||||
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CZU: 621.311 | |||||||
Pag. 90-95 | |||||||
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In this study, resistive switching behaviors of Ag/SiN/p -Si device were investigated by adjusting nitrogen concentration and layer thickness. The device with a nitrogen concentration of 50% and a thickness of 10 nm has a typical bipolar resistive switching behavior with a low forming voltage (~ 4 V), a high on/off ratio (~ 102), an excellent endurance (>102) and a long retention time (>105 s). According to I–V characteristics analyses, electric transports in both a high resistance state and a low resistance state are dominated by hot electron emission which is caused by the electron trapping and detrapping through immovable nitrogen-related traps. The temperature dependence of a resistive switching behavior not only illustrates the existence and importance of the traps, but also discovers a new phenomenon of the transition about the polar of a resistive switching method. Surely, more efforts need to be made for deeper understanding of the carrier transport in SiN thin films. |
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Cuvinte-cheie silicon nitride, resistive random access memory, temperature dependence of resistive switching behavior |
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