Diode detectors (DDs) are widely used in electronic information and communication systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the DD parameters is studied. Also, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 4.2 K are discussed. The comparison with existent literature data shows that the proposed DDs can be 10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their development is an urgent problem.