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 SM ISO690:2012ARUSHANOV, Ernest, SIEBENTRITT, Susanne, SIEBENTRITT, Susanne, LUX-STEINER, Martha Ch. H.. Defect band transport in p-type CuGaSe2. In: Journal of Physics Condensed Matter, 2005, vol. 17, pp. 2699-2704. ISSN 0953-8984. DOI: https://doi.org/10.1088/0953-8984/17/17/018 |
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  Journal of Physics Condensed Matter |
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| Volumul 17 / 2005 / ISSN 0953-8984 /ISSNe 1361-648X | ||||||
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| DOI:https://doi.org/10.1088/0953-8984/17/17/018 | ||||||
| Pag. 2699-2704 | ||||||
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The Hall effect and electrical resistivity are measured on slightly Cu-rich epitaxial CuGaSe2 films in the temperature range 15-300 K. The temperature dependence of the Hall coefficient is described by the two-band model with holes in both the valence and defect bands, as manifested by a maximum in the Hall coefficient. The model can be used to separate holes in the valence band and the defect band, allowing the determination of the activation energies and concentrations of the acceptors, and the concentration of the compensating donors. |
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| Cuvinte-cheie Engineering controlled terms Activation energy, Band structure, Electric conductivity, Epitaxial growth, Hall effect, Semiconducting gallium compounds, Thermal effects Engineering uncontrolled terms Defect band transport, Hall coefficient, Temperature dependence, Valence bands Engineering main heading Semiconducting films |
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