Positive thermopower of single bismuth nanowires
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
63 0
SM ISO690:2012
GROZAV, Anatol, KONDRYA, Elena. Positive thermopower of single bismuth nanowires. In: Journal of Physics Condensed Matter, 2004, vol. 16, pp. 6507-6518. ISSN 0953-8984. DOI: https://doi.org/10.1088/0953-8984/16/36/016
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Journal of Physics Condensed Matter
Volumul 16 / 2004 / ISSN 0953-8984 /ISSNe 1361-648X

Positive thermopower of single bismuth nanowires

DOI:https://doi.org/10.1088/0953-8984/16/36/016

Pag. 6507-6518

Grozav Anatol, Kondrya Elena
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
Proiecte:
 
Disponibil în IBN: 4 martie 2024


Rezumat

The thermoelectric power and electrical resistance of pure bismuth nanowires have been measured in longitudinal magnetic fields up to B = 20 T at temperatures between 4.2 and 26 K. At B = 0, the 200 nm samples exhibit large values of thermopower (about +110 μ V K-1 at 25 K), which are dominated by diffusion with no phonon drag being evident. Both the magnetoresistance and magnetothermopower show well-pronounced features generated by the diffuse surface scattering of hole carriers. In particular, the magnetothermopower offers the possibility of identifying the characteristic magnetic field, where the diameter of the hole Larmor orbit equals the wire diameter, as an extremum, in distinction from the magnetoresistance data, where the corresponding feature manifests as an inflection point. The frequencies of Shubnikov-de Haas oscillations were found to be consistent with the Fermi-surface parameters of bulk Bi. The contribution of holes to the charge transport in pure Bi nanowires is more significant than generally thought.

Cuvinte-cheie
Engineering controlled terms Carrier concentration, Electric resistance, Electron scattering, Fermi surface, Magnetic fields, Magnetoresistance, Nanostructured materials, phonons, thermal conductivity, Thermoelectricity Engineering uncontrolled terms High-resistivity wire (HRW), nanowires, Seedbeck effect, Thermoelectric power (TEP) Engineering main heading Bismuth

DataCite XML Export

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<identifier identifierType='DOI'>10.1088/0953-8984/16/36/016</identifier>
<creators>
<creator>
<creatorName>Grozav, A.D.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Condrea, E.P.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Positive thermopower of single bismuth nanowires</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2004</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0953-8984</relatedIdentifier>
<subjects>
<subject>Engineering controlled terms
Carrier concentration</subject>
<subject>Electric resistance</subject>
<subject>Electron scattering</subject>
<subject>Fermi surface</subject>
<subject>Magnetic fields</subject>
<subject>Magnetoresistance</subject>
<subject>Nanostructured materials</subject>
<subject>phonons</subject>
<subject>thermal conductivity</subject>
<subject>Thermoelectricity
Engineering uncontrolled terms
High-resistivity wire (HRW)</subject>
<subject>nanowires</subject>
<subject>Seedbeck effect</subject>
<subject>Thermoelectric power (TEP)
Engineering main heading
Bismuth</subject>
</subjects>
<dates>
<date dateType='Issued'>2004-09-15</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>The thermoelectric power and electrical resistance of pure bismuth nanowires have been measured in longitudinal magnetic fields up to B = 20 T at temperatures between 4.2 and 26 K. At B = 0, the 200 nm samples exhibit large values of thermopower (about +110 &mu; V K<sup>-1</sup>&nbsp;at 25 K), which are dominated by diffusion with no phonon drag being evident. Both the magnetoresistance and magnetothermopower show well-pronounced features generated by the diffuse surface scattering of hole carriers. In particular, the magnetothermopower offers the possibility of identifying the characteristic magnetic field, where the diameter of the hole Larmor orbit equals the wire diameter, as an extremum, in distinction from the magnetoresistance data, where the corresponding feature manifests as an inflection point. The frequencies of Shubnikov-de Haas oscillations were found to be consistent with the Fermi-surface parameters of bulk Bi. The contribution of holes to the charge transport in pure Bi nanowires is more significant than generally thought.</p></description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>