Steady-state and transient characteristics of photoconductivity in amorphous thermally deposited AsSe and As₂Se₃ amorphous films doped with 0.5 at.% Sn, Mn, Sm and Dy were studied. The spectral characteristics depend on composition in pseudo-binary As-Se glass system, as well as on the doping with impurities, Tin increase the decay rate in As ₂Se₃, while dysprosium was found to delay the rise and decay of photocurrent, which is attributed to an increase in trapping in deep localized states produced by doping of rare-earth ions. The photocurrent rise and decay was found to be consistent with the model of trap-controlled non-stationary capture and recombination in the localized states, exponentially distributed in energy.