UV irradiation effects in pure and tin-doped amorphous AsSe films
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POPESCU, Mihai A., YOVU, M., HOYER, Walter, SHPOTYUK, Oleh, SAVA, Florinel, LORINCZI, Adam. UV irradiation effects in pure and tin-doped amorphous AsSe films. In: Journal of Optoelectronics and Advanced Materials, 2001, vol. 3, pp. 303-306. ISSN 1454-4164.
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Journal of Optoelectronics and Advanced Materials
Volumul 3 / 2001 / ISSN 1454-4164

UV irradiation effects in pure and tin-doped amorphous AsSe films


Pag. 303-306

Popescu Mihai A.1, Yovu M.2, Hoyer Walter3, Shpotyuk Oleh4, Sava Florinel1, Lorinczi Adam1
 
1 National Institute of Materials Physics Bucharest-Magurele,
2 Center of Optoelectronics,
3 Chemnitz University of Technology,
4 Lviv Scientific Research Institute of Materials, Scientific Research Company Carat
 
 
Disponibil în IBN: 22 februarie 2024


Rezumat

Pure and tin-doped AsSe amorphous films were investigated. The changes in the MRO induced by Sn were analysed be accurate profiling the first sharp diffraction peak (FSDP) in the X-ray diffraction diagram. A shift of FSDP as a function of tin concentration was observed. The structural changes induced by ultraviolet rays (λ=336 nm) for various time intervals of irradiation were revealed by small angle X-ray diffraction. It was revealed the formation of a special layer at the surface of the films, whose thickness increases during UV irradiation.

Cuvinte-cheie
Amorphous AsSe films, Tin-doped AsSe, UV radiation, X-ray diffraction