Radiative recombination in ZnGa2S4 single crystals
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DERID, Yu., KOZHACHENKO, E., RADAUTSANU, Sergiu, TIGINYANU, Ion. Radiative recombination in ZnGa2S4 single crystals. In: Physica Status Solidi (A) Applied Research, 1989, vol. 113, pp. 265-266. ISSN 0031-8965. DOI: https://doi.org/10.1002/pssa.2211130277
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Physica Status Solidi (A) Applied Research
Volumul 113 / 1989 / ISSN 0031-8965 /ISSNe 1521-396X

Radiative recombination in ZnGa2S4 single crystals

DOI:https://doi.org/10.1002/pssa.2211130277

Pag. 265-266

Derid Yu., Kozhachenko E., Radautsanu Sergiu, Tiginyanu Ion
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 15 februarie 2024


Rezumat

The compound ZnGa2S4 is a tetrahedrally coordinated semiconductor which crystallizes in the defect chalcopyrite structure with S4 or D2d space group /I/. Single crystals (of O.lxO.lxO.1 mm size) have been firstly grown by Nitsche et al. 121. Lateron the photoconductivity spectra in these crystals were investigated 131. A wide photoconductivity band with maximum at 3.18 eV (T = 300 K) was observed. However, the luminescent properties of ZnGa2S4 have not been studied up to now. This note is devoted to the investigation of both the photoluminescence (PhL) and PhL excitation spectra as well as of thermal PhL quenching in these crystals.

Cuvinte-cheie
photoluminescence, Radiative, recombination