Magnetotransport of indium antimonide doped with manganese
Închide
Articolul precedent
Articolul urmator
80 0
SM ISO690:2012
KUZMINA, K., ARONZON, Boris, KOCHURA, Alexey, LASHKUL, Alexander V., LISUNOV, Konstantin, LÄHDERANTA, Erkki, SHAKHOV, Mikhail. Magnetotransport of indium antimonide doped with manganese. In: EPJ Web of Conferences, Ed. 7, 24-30 august 2013, Rhodes. Les Ulis: EDP Sciences, 2014, Ediția 7, Vol.75, pp. 1-4. ISSN 21016275. DOI: https://doi.org/10.1051/epjconf/20147505014
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
EPJ Web of Conferences
Ediția 7, Vol.75, 2014
Conferința "7th Joint European Magnetic Symposia"
7, Rhodes, Grecia, 24-30 august 2013

Magnetotransport of indium antimonide doped with manganese

DOI:https://doi.org/10.1051/epjconf/20147505014

Pag. 1-4

Kuzmina K.1, Aronzon Boris12, Kochura Alexey13, Lashkul Alexander V.1, Lisunov Konstantin14, Lähderanta Erkki1, Shakhov Mikhail15
 
1 Lappeenranta University of Technology,
2 P. N. Lebedev Physical Institute of RAS,
3 Southwest State University,
4 Institute of Applied Physics, Academy of Sciences of Moldova,
5 Ioffe Physical-Technical Institute, RAS
 
 
Disponibil în IBN: 12 februarie 2024


Rezumat

Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycrystalline In1-xMnxSb samples with x = 0.02 - 0.06, containing nanosize MnSb precipitates. The relative MR, Δρ/ρ, is positive within the whole range of B= 0 - 10 T and T ~ 20 - 300 K. The Hall resistivity, ρH, exhibits a nonlinear dependence on B up to the room temperature.MR is interpreted with the two-band model, suggesting two types of holes with different concentration and mobility. In addition, analysis of ρH (B, T) is performed by taking into account both the normal and the anomalous contributions. The latter is attributable to the effect of MnSb nanoprecipitates, having the ferromagnetic Curie temperature well above 300 K. 

Cuvinte-cheie
Zinc Antimonides, thermoelectric materials, thin films