Radiation effects in SnO2-Si sensor structures

Golovanov Vyacheslav; Khirunenko Lyudmila; Kiv Arnold; Fuks David L.; Soshin M.; Korotchenkov Ghenadii

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GOLOVANOV, Vyacheslav, KHIRUNENKO, Lyudmila, KIV, Arnold, FUKS, David L., SOSHIN, M., KOROTCHENKOV, Ghenadii. Radiation effects in SnO2-Si sensor structures. In: Radiation Effects and Defects in Solids, 2006, vol. 161, pp. 85-89. ISSN 1042-0150. DOI: https://doi.org/10.1080/10420150500493501

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Radiation Effects and Defects in Solids

Volumul 161 / 2006 / ISSN 1042-0150 /ISSNe 1029-4953

Radiation effects in SnO2-Si sensor structures

DOI:https://doi.org/10.1080/10420150500493501

Pag. 85-89

Golovanov Vyacheslav¹, Khirunenko Lyudmila², Kiv Arnold³, Fuks David L.³, Soshin M.², Korotchenkov Ghenadii⁴

¹ South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odessa,
² Institute of Physics of the National Academy of Sciences of Ukraine,
³ Ben-Gurion University of the Negev,
⁴ Technical University of Moldova

Disponibil în IBN: 12 februarie 2024

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Rezumat

The radiation resistance of SnO₂-Si sensor structures irradiated by fast electrons and γ rays was studied. The radiation-induced structural changes were investigated using the Fourier transform infrared (FTIR) spectroscopy method. FTIR spectroscopy was used with grazing angles of light incidence on the surface of SnO₂-Si structure. New bands or any other modifications in spectra for irradiated SnO₂ films were not observed. It was found that SnO₂ films reveal a high resistance to irradiation while structural changes were observed in the silicon substrate.

Cuvinte-cheie
infrared spectroscopy, irradiation, Sensors, tin oxide