Articolul precedent |
Articolul urmator |
77 0 |
SM ISO690:2012 ISPĂȘOIU, Radu, PUŞCAŞ, Niculae Tiberiu N., SMEU, Emil, BOTEZ, Cristian, YACOVLEV, Vladimir, MEREUTZA, Alexandru, SURUCEANU, Grigore. Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 5, 9-12 septembrie 1997, Bucharest. Bellingham, Washington: SPIE, 1998, Ediția 5, Vol.3405, pp. 462-468. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.312791 |
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Proceedings of SPIE - The International Society for Optical Engineering Ediția 5, Vol.3405, 1998 |
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Conferința "Fifth Conference on Optics" 5, Bucharest, Romania, 9-12 septembrie 1997 | ||||||
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DOI:https://doi.org/10.1117/12.312791 | ||||||
Pag. 462-468 | ||||||
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In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes (SQW BH LDs). We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation (COD) of the LD mirror facet layers, where the nonlinear optical interaction occurs. |
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Cuvinte-cheie InGaAs/GaAs/AlGaAs laser diodes, Internal second harmonic generation |
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