| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012GEORGOBIANI, Anatoly, GRUZINTSEV, Alex N., ZAYATS, Anatoly, TIGINYANU, Ion. Deep centres related to defect complexes in wide-gap semiconductors. In: Semiconductor Science and Technology, 1991, vol. 6, pp. 165-169. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/6/3/004 |
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  Semiconductor Science and Technology |
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| Volumul 6 / 1991 / ISSN 0268-1242 | ||||||
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| DOI:https://doi.org/10.1088/0268-1242/6/3/004 | ||||||
| Pag. 165-169 | ||||||
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A model of binary complexes is proposed, taking into account Coulomb and short-range potentials of defects and their elastic interaction with the crystal lattice. The energy levels of such nearest-neighbour associates, the lineshape and polarization of luminescence and the photoionization cross section are calculated. The local phonon energy, distance between components and its charge state can be determined from experimental data on the basis of this theory. A number of complexes are described by the model in AIIBVI and AIIB2IIIC4VI compounds. |
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| Cuvinte-cheie Crystals, ionization, Luminescence, phonons, spectroscopy |
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