Quasi‐Continuously Distributed Traps and Photoluminescence in ZnGa2Se4 Single Crystals
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RADAUTSANU, Sergiu, TIGINYANU, Ion, FULGA, V., DERID, Yu.. Quasi‐Continuously Distributed Traps and Photoluminescence in ZnGa2Se4 Single Crystals. In: Physica Status Solidi (A) Applied Research, 1989, vol. 114, pp. 259-263. ISSN 0031-8965. DOI: https://doi.org/10.1002/pssa.2211140125
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Physica Status Solidi (A) Applied Research
Volumul 114 / 1989 / ISSN 0031-8965 /ISSNe 1521-396X

Quasi‐Continuously Distributed Traps and Photoluminescence in ZnGa2Se4 Single Crystals

DOI:https://doi.org/10.1002/pssa.2211140125

Pag. 259-263

Radautsanu Sergiu, Tiginyanu Ion, Fulga V., Derid Yu.
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 2 februarie 2024


Rezumat

The results of the ZnGa2Se4 thermostimulated conductivity (TSC) and photoluminescence (PL) study are presented. The radiative electron transitions are shown to occur from quasi‐continuously distributed traps below the bottom of the conduction band to an acceptor level with 0.15 eV activation energy. The influence of sample annealing followed by quenching on both PL and PL excitation spectra is investigated. 

Cuvinte-cheie
Heat Treatment--Annealing, photoluminescence