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SM ISO690:2012 TIGINYANU, Ion, URSACHI, Veaceslav. GaN nanostructuring for the fabrication of thin membranes and emerging applications. In: Turkish Journal of Physics, 2014, vol. 38, pp. 328-368. ISSN 1300-0101. DOI: https://doi.org/10.3906/fiz-1406-20 |
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Turkish Journal of Physics | ||||||
Volumul 38 / 2014 / ISSN 1300-0101 /ISSNe 1303-6122 | ||||||
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DOI:https://doi.org/10.3906/fiz-1406-20 | ||||||
Pag. 328-368 | ||||||
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We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials. |
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Cuvinte-cheie Dry etching, E-beam lithography, GaN nanomembranes, Liftoff techniques, Photoelectrochemical etching, Photonic crystal membrane nanocavities, Sensors, Surface charge lithography, Wet etching |
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