New nonlinear optical effect: Self reflection phenomenon due to exciton-biexciton-light interaction in semiconductors
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KHADZHI, Peter, LYAKHOMSKAYA, K., NADKIN, L., MARKOV, D.. New nonlinear optical effect: Self reflection phenomenon due to exciton-biexciton-light interaction in semiconductors. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 1, 26 iunie - 1 iulie 2001, Minsk. Bellingham, Washington: SPIE, 2002, Vol.4748, pp. 97-103. ISSN 0277786X. DOI: https://doi.org/10.1117/12.468932
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Proceedings of SPIE - The International Society for Optical Engineering
Vol.4748, 2002
Conferința "Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures"
1, Minsk, Belarus, 26 iunie - 1 iulie 2001

New nonlinear optical effect: Self reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

DOI:https://doi.org/10.1117/12.468932

Pag. 97-103

Khadzhi Peter12, Lyakhomskaya K.12, Nadkin L.12, Markov D.12
 
1 T.G. Shevchenko State University of Pridnestrovie, Tiraspol,
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 1 februarie 2024


Rezumat

The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted. © Society of Photo-Optical Instrumentation Engineers.

Cuvinte-cheie
biexciton, bistability, exciton, self-reflection