Articolul precedent |
Articolul urmator |
98 0 |
SM ISO690:2012 TIGINYANU, Ion, POPA, Veaceslav, STEVENS-KALCEFF, Marion A.. Ultra-thin GaN membranes fabricated by using surface charge lithography. In: ECS Transactions, Ed. 6, 1-6 mai 2011, Montreal. Pennington, New Jersey: Electrochemical Society Inc., 2012, Vol. 35, Ediția 6, pp. 13-19. ISBN 978-160768217-2, 978-156677867-1. ISSN 19385862. DOI: https://doi.org/10.1149/1.3570841 |
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ECS Transactions Vol. 35, Ediția 6, 2012 |
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Simpozionul "ECS Transactions" 6, Montreal, Canada, 1-6 mai 2011 | ||||||
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DOI:https://doi.org/10.1149/1.3570841 | ||||||
Pag. 13-19 | ||||||
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We report on fabrication of ultra-thin GaN membranes of nanometer scale thickness, by using the concept of surface charge lithography based on low-energy ion treatment of the sample surface with subsequent photoelectrochemical etching. The membranes prove to be transparent to both electrons and UV radiation, emit mainly yellow cathodoluminescence, and exhibit electrical conductivity. Successful fabrication of nanometer-thin membranes opens unique possibilities for exploration of two dimensional GaN-based structures predicted to be ferromagnetic with defect-induced half-metallic configuration which is of peculiar importance for spintronics applications. |
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Cuvinte-cheie electrical conductivity, Gan membranes, GaN-based structures, Nano-meter scale, Photo-electrochemical etching, Sample surface, Spintronics application, Surface charge lithography |
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