Two-dimensional metallo-semiconductor networks have been fabricated by pulsed electrochemical deposition of Pt inside porous GaP membranes with parallel pores possessing diameters in the micrometer and sub-micrometer ranges. The electrochemical parameters were optimized for a uniform metal deposition on the inner surface of the pores. This technology was applied for the fabrication of a variable capacitance device on the basis of Pt/GaP Schottky diodes formed on Pt/GaP interpenetrating networks. The capacitance density variation caused by the change in voltage applied to this device is much higher than that inherent to standard devices. Taking into account the quasi-ordered spatial distribution of pores in the GaP template, one can assume that the produced 2D metallo-semiconductor networks are promising also for specific photonic applications.