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 SM ISO690:2012COJOCARI, Oleg, POPA, Veaceslav, URSACHI, Veaceslav, TIGINYANU, Ion, MUTAMBA, Kabula, SAGLAM, M., HARTNAGEL, Hans Ludwig. Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers. In: International Conference on Infrared and Millimeter Waves, Ed. 29, 27 septembrie - 1 octombrie 2004, Karlsruhe. New Jersey: Institute of Electrical and Electronics Engineers Inc. (IEEE), 2004, Ediția 29, pp. 317-318. ISBN 0780384903, 978-078038490-3. DOI: https://doi.org/10.1109/ICIMW.2004.1422084 |
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 International Conference on Infrared and Millimeter Waves Ediția 29, 2004 |
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Conferința "2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics" 29, Karlsruhe, Germania, 27 septembrie - 1 octombrie 2004 | ||||||
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| DOI:https://doi.org/10.1109/ICIMW.2004.1422084 | ||||||
| Pag. 317-318 | ||||||
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Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality is studied using PL-measurements and electrical characterisation. DC-characteristics of 5μm-diameter anodes result in a cut-off frequency of 390GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed. |
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| Cuvinte-cheie Annealing, capacitance, Current voltage characteristics, Electric breakdown, electrochemistry, Epitaxial growth, etching, Frequency multiplying circuits, Gallium nitride, Lattice constants, Metallorganic chemical vapor deposition, Passivation, photoluminescence, Plasma enhanced chemical vapor deposition |
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