| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
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 SM ISO690:2012RADAUTSANU, Sergiu, TIGINYANU, Ion, PYSHNAYA, N., URSAKI, Veaceslav. Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers. In: Acta Physica Hungarica, 1994, vol. 74, pp. 161-165. ISSN 0231-4428. DOI: https://doi.org/10.1007/BF03055248 |
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 Acta Physica Hungarica |
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| Volumul 74 / 1994 / ISSN 0231-4428 | ||||||
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| DOI:https://doi.org/10.1007/BF03055248 | ||||||
| Pag. 161-165 | ||||||
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| Rezumat | ||||||
Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of the conductivity compensation degree with the dose of electron irradiation has been observed, which proves to be connected with the intensive formation of deep (Ec-0.4 eV) radiation donor-type defects. |
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