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 SM ISO690:2012RADAUTSANU, Sergiu, TIGINYANU, Ion, URSAKI, Veaceslav, KORSHUNOV, Fedor, SOBOLEV, Nikolai, KUDRYAVTSEVA, E.. The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP. In: Solid State Communications, 1993, vol. 85, pp. 525-527. ISSN 0038-1098. DOI: https://doi.org/10.1016/0038-1098(93)90012-C |
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  Solid State Communications |
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| Volumul 85 / 1993 / ISSN 0038-1098 /ISSNe 1879-2766 | ||||||
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| DOI:https://doi.org/10.1016/0038-1098(93)90012-C | ||||||
| Pag. 525-527 | ||||||
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The near-band-edge photoluminescence (PL) bands observed at 1.305 and 1.392 eV (T = 4.2 K) in electron-irradiated InP single crystals and epilayers have different behaviour with increasing temperature of isochronous annealing. Moreover, the band at 1.392 eV shows a complex structure, at least in n-InP epilayers. On the ground of these new results, an earlier proposed connection between these PL bands and the Inp-antisite defect may require a revision. |
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| Cuvinte-cheie Electron irradiation, indium phosphide, Isochronous annealing, Near-band-edge photoluminescence spectra, single crystals |
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