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 SM ISO690:2012TIGINYANU, Ion, PYSHNAYA, N., CĂLIN, Mircea, URSACHI, Veaceslav. Observation of 0.4 eV electron trap in electron-irradiated InP:Fe single crystals. In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Ed. 6, 27-31 martie 1994, New Jersey. New Jersey: Institute of Electrical and Electronics Engineers Inc. (IEEE), 1994, Ediţia 6, pp. 210-213. ISSN 10928669. DOI: https://doi.org/10.1109/SMICND.2013.6688114 |
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 Conference Proceedings - International Conference on Indium Phosphide and Related Materials Ediţia 6, 1994 |
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Conferința "6th International Conference on Indium Phosphide and Related Materials" 6, New Jersey, Statele Unite ale Americii, 27-31 martie 1994 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2013.6688114 | ||||||
| Pag. 210-213 | ||||||
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The aim of the paper is to present an experimental data to prove the existence of 0.4 eV electron trap in as-grown and fast-electron (E=3.5-4 MeV) irradiated InP:Fe single crystals. Fast-electron irradiation was used for the purpose of changing the position of the Fermi-level in the band gap of InP:Fe single crystals. The 0.4 eV electron trap was studied by thermally stimulated current (TSC) spectroscopy. |
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| Cuvinte-cheie Annealing, chemical activation, Crystal defects, Crystal growth, Crystals, dosimetry, Electron energy levels, Electrons, Energy gap, radiation effects, Spectroscopic analysis, thermal conductivity |
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