| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 91 0 |
 SM ISO690:2012GEORGOBIANI, Anatoly, GRUZINTSEV, Alex N., RATSEEV, S., TEZLEVAN, Victor, TIGINYANU, Ion, URSACHI, Veaceslav. Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals. In: Crystal Research and Technology, 1986, vol. 21, pp. 259-263. ISSN 0232-1300. DOI: https://doi.org/10.1002/crat.2170210218 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Crystal Research and Technology |
||||||
| Volumul 21 / 1986 / ISSN 0232-1300 /ISSNe 1521-4079 | ||||||
|
||||||
| DOI:https://doi.org/10.1002/crat.2170210218 | ||||||
| Pag. 259-263 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy positions of levels of antisite Inrd and Cdrn defects are found. The role of antisite defects in the process of conductivity compensation is analysed. 1. Introduction |
||||||
|
|
|
|
