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 SM ISO690:2012ANEDDA, Alberto, SERPI, A., MOLDOVYAN, Nikolay, TIGINYANU, Ion, URSAKI, Veaceslav. Luminescent and photoconductive properties of agga2.5in2.5ss and cuga2.5in2.5ss new semiconductors. In: Japanese Journal of Applied Physics, 1993, vol. 32, supl. nr. 3, pp. 466-468. ISSN 0021-4922. DOI: https://doi.org/10.7567/JJAPS.32S3.466 |
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  Japanese Journal of Applied Physics |
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| Volumul 32, Supliment nr. 3 / 1993 / ISSN 0021-4922 /ISSNe 1347-4065 | ||||||
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| DOI:https://doi.org/10.7567/JJAPS.32S3.466 | ||||||
| Pag. 466-468 | ||||||
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Results of a complex study of photoluminescence (PL), photoconductivity (PC) and photo-voltaic (PV) spectra in AgGa2.5In2.5Sg and CuGa2.5In2.5Sg single crystals are presented. The values of indirect (E\=2.25 eV) and direct(is g=2.60 eV, T=300 K) gaps in AgGa2.5In2.5Sg have been determined. PL spectrum of AgGa2.5In2.5Sg is shown to consist of two overlapping bands with the maxima at 1.57 and 1.95 eV (T—ll K), while CuGa2.5In2.5Sg is characterized by asingle PL band, the position of its maximum (1.72-1.77 eV) depending upon the excitation power density. The radiativeelectron transitions in CuGa2.5In2.5Sg are assumed to occur from the quasicontinuously distributed traps below the bottom of the conduction band to an acceptor level with 0.07 eV activation energy. |
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| Cuvinte-cheie band gap, Electron transitions, Layered compounds, Photo-voltaic spectra, photoconductivity, photoluminescence |
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