Transport properties of β-FeSi2
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ARUSHANOV, Ernest, LISUNOV, Konstantin. Transport properties of β-FeSi2. In: Japanese Journal of Applied Physics, 2015, vol. 54, pp. 1-13. ISSN 0021-4922. DOI: https://doi.org/10.7567/JJAP.54.07JA02
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Japanese Journal of Applied Physics
Volumul 54 / 2015 / ISSN 0021-4922 /ISSNe 1347-4065

Transport properties of β-FeSi2

DOI:https://doi.org/10.7567/JJAP.54.07JA02

Pag. 1-13

Arushanov Ernest1, Lisunov Konstantin12
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Lappeenranta University of Technology
 
 
Disponibil în IBN: 24 ianuarie 2024


Rezumat

The aim of this paper is to summarize considerable experimental efforts undertaken within the last decades in the investigations of transport properties of β-FeSi2. The β-FeSi2 compound is the most investigated among a family of semiconducting silicides. This material has received considerable attention as an attractive material for optoelectronic, photonics, photovoltaics and thermoelectric applications. Previous reviews of the transport properties of β-FeSi2 have been given by Lange and Ivanenko et al. about 15 years ago. The Hall effect, the conductivity, the mobility and the magnetoresistance data are presented. Main attention is paid to the discussion of the impurity (defect) band conductivity, the anomalous Hall effect, the scattering mechanisms of charge carriers, as well as to the hopping conduction and the magnetoresistance.

Cuvinte-cheie
Anomalous hall effects, Band conductivity, Hopping conduction, photovoltaics, Scattering mechanisms, Thermoelectric application