Effect of thermal processing and irradiation by phosphorus ions on the emission properties of InP
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
60 0
SM ISO690:2012
GEORGOBIANI, Anatoly, MIKULENOK, A., PANASYUK, E., TIGINYANU, Ion. Effect of thermal processing and irradiation by phosphorus ions on the emission properties of InP. In: Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik ″Kratkie Soobshcheniya po Fizike″. AN SSSR), 1982, pp. 33-36. ISSN 0364-2321.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik ″Kratkie Soobshcheniya po Fizike″. AN SSSR)
/ 1982 / ISSN 0364-2321

Effect of thermal processing and irradiation by phosphorus ions on the emission properties of InP


Pag. 33-36

Georgobiani Anatoly1, Mikulenok A.2, Panasyuk E.2, Tiginyanu Ion3
 
1 Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences,
2 P. N. Lebedev Physical Institute of RAS,
3 Kishinau Polytechnical Institut
 
 
Disponibil în IBN: 24 ianuarie 2024


Rezumat

In the region 0. 9-1. 3 ev, three photoluminescence bands of InP are observed at energies 1. 03, 1. 08, and 1. 21 ev (T equals 6 degree K), whose intensity depends on the processing conditions of the samples. It is established that the band at 1. 08 ev is caused by phosphorus deficiency, and the other two bands by excess phosphorus in the crystals.

Cuvinte-cheie
phosphorus, photoluminescence, Thermal effects