| Articolul precedent |
| Articolul urmator |
 |
 84 0 |
 SM ISO690:2012STEVENS-KALCEFF, Marion A., LANGA, Sergiu, TIGINYANU, Ion, CARSTENSEN, Juergen, CHRISTOPHERSEN, Marc, FOLL, Helmut. Comparative SEM and cathodoluminescence microanalysis of porous GaP structures. In: Materials Research Society Symposium - Proceedings, Ed. 1, 26-29 noiembrie 2000, Cambridge. Warrendale, Pennsylvania: Materials Research Society, 2001, Vol. 638, pp. 5311-5316. ISSN 02729172. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Materials Research Society Symposium - Proceedings Vol. 638, 2001 |
||||||
|
Simpozionul " Microcrystalline and Nanocrystalline Semiconductors - 2000" 1, Cambridge, Marea Britanie, 26-29 noiembrie 2000 | ||||||
|
||||||
| Pag. 5311-5316 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP substrates in a sulfuric acid solution. Both the CL and morphology of porous layers were found to depend upon the anodic current density. At high current density (100 mA/cm2) anodization leads to the formation of so-called current-line oriented pores and an increase in the CL intensity. We observed self-induced voltage oscillations giving rise to a synchronous modulation of the diameter of pores and CL intensity. When the current density decreased to values as low as 1 mA/cm2 the pores began to grow along 〈111〉 crystallographic directions and the CL intensity was observed to be lower than that of bulk GaP. |
||||||
| Cuvinte-cheie Anodes, cathodoluminescence, Crystal microstructure, crystallography, current density, Electric potential, electrochemistry, etching, Microanalysis, morphology, porosity, porous materials, scanning electron microscopy, sulfuric acid |
||||||
|
|
|
|
